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| M Features MCP73841/2/3/4 Description The MCP7384X family of devices are highly advanced linear charge management controllers for use in space-limited, cost-sensitive applications. The MCP73841 and MCP73842 combine high accuracy, constant-voltage, constant-current regulation, cell preconditioning, cell temperature monitoring, advanced safety timers, automatic charge termination and charge status indication in space-saving, 10-pin MSOP packages. The MCP73841 and MCP73842 provide complete, fully-functional, stand-alone charge management solutions. The MCP73843 and MCP73844 employ all the features of the MCP73841 and MCP73842, with the exception of the cell temperature monitor. The MCP73843 and MCP73844 are offered in 8-pin MSOP packages. The MCP73841 and MCP73843 are designed for applications utilizing single-cell Lithium-Ion or LithiumPolymer battery packs. Two preset voltage regulation options are available (4.1V and 4.2V) for use with either coke or graphite anodes. The MCP73841 and MCP73843 operate with an input voltage range of 4.5V to 12V. The MCP73842 and MCP73844 are designed for applications utilizing dual series cell Lithium-Ion or Lithium-Polymer battery packs. Two preset voltage regulation options are available (8.2V and 8.4V). The MCP73842 and MCP73844 operate with an input voltage range of 8.7V to 12V. The MCP7384X family of devices are fully specified over the ambient temperature range of -40C to +85C. Advanced Single or Dual Cell Lithium-Ion/ Lithium-Polymer Charge Management Controllers * Linear Charge Management Controllers * High-Accuracy Preset Voltage Regulation: - + 0.5% (max) * Four Preset Voltage Regulation Options: - 4.1V - MCP73841-4.1, MCP73843-4.1 - 4.2V - MCP73841-4.2, MCP73843-4.2 - 8.2V - MCP73842-8.2, MCP73844-8.2 - 8.4V - MCP73842-8.4, MCP73844-8.4 * Programmable Charge Current * Programmable Safety Charge Timers * Preconditioning of Deeply Depleted Cells * Automatic End-of-Charge Control * Optional Continuous Cell Temperature Monitoring (MCP73841 and MCP73842) * Charge Status Output for Direct LED Drive * Automatic Power-Down when Input Power Removed * Temperature Range: -40C to 85C * Packaging: MSOP-10 - MCP73841, MCP73842 MSOP-8 - MCP73843, MCP73844 Applications * * * * * * * Lithium-Ion/Lithium-Polymer Battery Chargers Personal Data Assistants Cellular Telephones Hand-Held Instruments Cradle Chargers Digital Cameras MP3 Players Package Types 10-Pin MSOP SENSE VDD STAT1 EN THREF 1 2 3 4 5 10 9 8 7 6 DRV VBAT VSS TIMER THERM Typical Application Circuit 1A Lithium-Ion Battery Charger MA2Q705 5V 10 F 2 3 4 100 k 100 m 1 VDD STAT1 EN NDS8434 8 VBAT 7 10 F + Single Lithium-Ion Cell SENSE DRV 8-Pin MSOP SENSE VDD STAT1 EN 1 2 3 4 MCP73843 MCP73844 MCP73841 MCP73842 VSS 6 5 TIMER MCP73843 0.1 F 8 7 6 5 DRV VBAT VSS TIMER 2004 Microchip Technology Inc. DS21823B-page 1 MCP73841/2/3/4 Functional Block Diagram VDD VDD SENSE 1 k - + Charge Current Amplifier 12 k VREF 90 k 10 k + UVLO Comparator Constant-Voltage/ Recharge Comp. + Power-On Delay VREF 150.02 k VUVLO VREF (1.2V) 5.15 k (4.29 k) THREF 100 k THERM 50 k + 50 k TIMER MCP73841 and MCP73842 Only Charge_ok IREG/10 Oscillator + Temperature Comparators Drv Stat 1 Charge Control, Charge Timers, And Status Logic VSS STAT1 74.21 k Charge Termination Comparator + 10 k VREF 90 k Charge Current Control Amplifier + - Voltage Control Amplifier + VREF Charge_ok Precon Precondition Comp. + 300 k (825 k) VBAT DRV IREG/10 Precondition Control VUVLO 0.79 k EN Bias and Reference Generator DS21823B-page 2 2004 Microchip Technology Inc. MCP73841/2/3/4 1.0 ELECTRICAL CHARACTERISTICS *Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings VDD.................................................................................13.5V All inputs and outputs w.r.t. VSS ................ -0.3 to (VDD+0.3)V Current at DRV Pin ......................................................4 mA Current at STAT1 Pin .................................................30 mA Maximum Junction Temperature, TJ ............................. 150C Storage temperature .....................................-65C to +150C ESD protection on all pins: Human Body Model (1.5 k in Series with 100 pF)....... 2 kV Machine Model (200 pF, No Series Resistance) .............200V DC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG(Typ)+0.3V] to 12V, TA = -40C to +85C. Typical values are at +25C, V DD = [VREG(Typ) + 1V]. Parameters Supply Input Supply Voltage MCP73841, MCP73843 MCP73842, MCP73844 Supply Current ISS V DD 4.5 8.7 - - - - 0.25 0.75 12 12 4 4 V V A mA Disabled Operating VDD =VREG(Typ)+1V VDD Low-to-High VDD Low-to-High VDD High-to-Low VDD High-to-Low Sym Min Typ Max Units Conditions UVLO Start Threshold MCP73841, MCP73843 MCP73842, MCP73844 UVLO Stop Threshold MCP73841, MCP73843 MCP73842, MCP73844 VSTART 4.25 8.45 VSTOP 4.20 8.40 VREG 4.079 4.179 8.159 8.358 |(VBAT/ VBAT )|/VDD |VBAT|/VBAT PSRR - - - - - 4.1 4.2 8.2 8.4 0.025 0.01 -58 -42 -30 0.4 4.121 4.221 8.241 8.442 0.25 0.25 - - - 1 V V V V %/V % dB dB dB A VDD = [VREG(Typ)+1V], IOUT = 10 mA, TA = -5C to +55C VDD = [VREG(Typ)+1V], IOUT = 10 mA, TA = -5C to +55C VDD = [VREG(Typ)+1V], IOUT = 10 mA, TA = -5C to +55C VDD = [VREG(Typ)+1V], IOUT = 10 mA, TA = -5C to +55C VDD = [VREG(Typ)+1V] to 12V, IOUT = 10 mA IOUT = 10 mA to 150 mA, VDD = [VREG(Typ)+1V] IOUT = 10 mA, 100 Hz IOUT = 10 mA, 1 kHz IOUT = 10 mA, 10 kHz VDD Floating, VBAT = VREG(Typ) 4.40 8.60 4.55 8.85 V V 4.45 8.65 4.60 8.90 V V Voltage Regulation (Constant-Voltage Mode) Regulated Output Voltage MCP73841-4.1, MCP73843-4.1 MCP73841-4.2, MCP73843-4.2 MCP73842-8.2, MCP73844-8.2 MCP73842-8.4, MCP73844-8.4 Line Regulation Load Regulation Supply Ripple Attenuation Output Reverse Leakage Current Fast Charge Current Regulation Threshold IDISCHARGE - Current Regulation (Fast Charge Constant-Current Mode) VFCS 100 110 120 mV VDD - VSENSE, TA = -5C to +55C 2004 Microchip Technology Inc. DS21823B-page 3 MCP73841/2/3/4 DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG(Typ)+0.3V] to 12V, TA = -40C to +85C. Typical values are at +25C, V DD = [VREG(Typ) + 1V]. Parameters Precondition Current Regulation Threshold Precondition Threshold Voltage MCP73841-4.1, MCP73843-4.1 MCP73841-4.2, MCP73843-4.2 MCP73842-8.2, MCP73844-8.2 MCP73842-8.4, MCP73844-8.4 Charge Termination Charge Termination Threshold Automatic Recharge Recharge Threshold Voltage MCP73841, MCP73843 MCP73842, MCP73844 External MOSFET Gate Drive Gate Drive Current Gate Drive Minimum Voltage Gate - Source Clamp Voltage Thermistor Reference Output Voltage Temperature Coefficient Thermistor Reference Source Current Thermistor Reference Line Regulation Thermistor Reference Load Regulation Upper Trip Threshold Upper Trip Point Hysteresis Lower Trip Threshold Lower Trip Point Hysteresis Input Bias Current Status Indicator Sink Current Low Output Voltage Input Leakage Current ISINK VOL ILK 4 - - 7 200 0.01 12 400 1 mA mV A ISINK = 1 mA ISINK = 0 mA, VSTAT1 = 12V IDRV VDRVMIN V GS VTHREF TC THREF ITHREF |(VTHREF / VTHREF )|/ VDD VTHREF / VTHREF VT1 VT1HYS VT2 VT2HYS |IBIAS| - - - -7.0 2.475 - 200 - 2 -0.5 - - 2.55 +50 - 0.1 - - 1.0 -4.5 2.625 - - 0.25 mA mA V V V ppm/C A %/V VDD=[VREG(Typ)+1V] to 12V Sink, CV Mode Source, CV Mode VDD = 4.5V VDD = 12.0V TA = +25C, VDD = VREG(Typ)+1V, ITHREF = 0 mA V RTH VREGVREGVREG300 mV 200 mV 100 mV VREGVREGVREG600 mV 400 mV 200 mV V V VBAT High-to-Low VBAT High-to-Low VTCS 4 7 10 mV VDD - VSENSE, TA = -5C to +55C Sym VPCS VPTH 2.70 2.75 5.40 5.50 2.80 2.85 5.60 5.70 2.90 2.95 5.80 5.90 V V V V VBAT Low-to-High VBAT Low-to-High VBAT Low-to-High VBAT Low-to-High Min 5 Typ 10 Max 15 Units mV Conditions VDD - VSENSE, TA = -5C to +55C Preconditioning Current Regulation (Trickle Charge Constant-Current Mode) Thermistor Reference - MCP73841, MCP73842 - 0.01 0.10 % ITHREF = 0 mA to 0.20 mA Thermistor Comparator - MCP73841, MCP73842 1.18 - 0.59 - - 1.25 -50 0.62 80 - 1.32 - 0.66 - 2 V mV V mV A DS21823B-page 4 2004 Microchip Technology Inc. MCP73841/2/3/4 DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG(Typ)+0.3V] to 12V, TA = -40C to +85C. Typical values are at +25C, V DD = [VREG(Typ) + 1V]. Parameters Enable Input Input High-Voltage Level Input Low-Voltage Level Input Leakage Current V IH VIL ILK 1.4 - - 0.01 - 0.8 1 V V A VENABLE = 12V Sym Min Typ Max Units Conditions AC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG(Typ)+0.3V] to 12V, TA = -40C to +85C. Typical values are at +25C, V DD= [VREG(Typ)+1V]. Parameters UVLO Start Delay Current Regulation Transition Time Out of Preconditioning Current Rise Time Out of Preconditioning Fast Charge Safety Timer Period Preconditioning Current Regulation Preconditioning Charge Safety Timer Period Charge Termination Elapsed Time Termination Period Status Indicators Status Output turn-off Status Output turn-on tOFF tON - - - - 200 200 sec sec ISINK = 10 mA to 0 mA ISINK = 0 mA to 10 mA tTERM 2.5 2.9 3.3 Hours CTIMER = 0.1 F tPRECON 50 60 70 Minutes CTIMER = 0.1 F tDELAY tRISE tFAST - - 1.2 - - 1.4 1 1 1.6 msec msec Hours VBAT < VPTH to VBAT > VPTH IOUT Rising to 90% of IREG CTIMER = 0.1 F Sym tSTART Min - Typ - Max 5 Units msec Conditions VDD Low-to-High TEMPERATURE SPECIFICATIONS Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [VREG(Typ)+0.3V] to 12V. Typical values are at +25C, V DD= [VREG(Typ)+1.0V]. Parameters Temperature Ranges Specified Temperature Range Operating Temperature Range Storage Temperature Range Thermal Package Resistances Thermal Resistance, MSOP-10 Thermal Resistance, MSOP-8 JA JA 113 206 C/W C/W 4-Layer JC51-7 Standard Board, Natural Convection Single-Layer SEMI G42-88 Board, Natural Convection TA TA TA -40 -40 -65 +85 +125 +150 C C C Sym Min Typ Max Units Conditions 2004 Microchip Technology Inc. DS21823B-page 5 MCP73841/2/3/4 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, VDD = [VREG(Typ) + 1V], IOUT = 10 mA and TA= +25C. 4.203 4.202 4.201 VBAT (V) 4.200 4.199 4.198 4.197 4.196 10 100 IOUT (mA) 1000 -5C +55C +25C 1.40 1.20 1.00 ISS (mA) 0.80 0.60 0.40 0.20 0.00 10 100 IOUT (mA) 1000 +25C -45C MCP73841-4.2V VDD = 5.2 V MCP73841-4.2V VDD = 5.2 V +85C FIGURE 2-1: Battery Regulation Voltage (VBAT) vs. Charge Current (IOUT). 4.203 4.202 4.201 VBAT (V) 4.200 4.199 4.198 4.197 4.196 4.5 6.0 7.5 9.0 10.5 12.0 VDD (V) -5C +55C +25C FIGURE 2-4: Supply Current (ISS) vs. Charge Current (IOUT). 1.40 1.20 1.00 ISS (mA) 0.80 0.60 0.40 0.20 0.00 4.5 6.0 7.5 9.0 10.5 12.0 VDD (V) +25C -45C +85C MCP73841-4.2V IOUT = 1000 mA MCP73841-4.2V IOUT = 1000 mA FIGURE 2-2: Battery Regulation Voltage (VBAT) vs. Supply Voltage (VDD). 4.203 4.202 4.201 VBAT (V) 4.200 4.199 4.198 4.197 4.196 4.5 6.0 7.5 9.0 10.5 12.0 VDD (V) -5C +55C +25C MCP73841-4.2V IOUT = 10 mA FIGURE 2-5: Supply Current (ISS) vs. Supply Voltage (VDD). 1.40 1.20 1.00 ISS (mA) 0.80 0.60 0.40 0.20 0.00 4.5 6.0 7.5 9.0 10.5 VDD (V) -45C +25C +85C 12.0 MCP73841-4.2V IOUT = 10 mA FIGURE 2-3: Battery Regulation Voltage (VBAT) vs. Supply Voltage (VDD). FIGURE 2-6: Supply Current (ISS) vs. Supply Voltage (VDD). DS21823B-page 6 2004 Microchip Technology Inc. MCP73841/2/3/4 Note: Unless otherwise indicated, VDD = [VREG(Typ) + 1V], IOUT = 10 mA and TA= +25C. 8.408 8.406 8.404 8.402 VBAT (V) 8.400 8.398 8.396 8.394 8.392 8.390 10 100 IOUT (mA) 1000 -5C +55C +25C 1.40 1.20 1.00 ISS (mA) 0.80 0.60 0.40 0.20 0.00 10 100 IOUT (mA) 1000 -45C MCP73842-8.4V VDD = 9.4 V MCP73842-8.4V VDD = 9.4 V +85C +25C FIGURE 2-7: Battery Regulation Voltage (VBAT) vs. Charge Current (IOUT). 8.408 8.406 8.404 8.402 VBAT (V) 8.400 8.398 8.396 8.394 8.392 8.390 8.8 9.2 9.6 10 10.4 10.8 11.2 11.6 VDD (V) 12 -5C +55C +25C MCP73842-8.4V I OUT = 1000 mA FIGURE 2-10: Supply Current (ISS) vs. Charge Current (IOUT). 1.40 1.20 1.00 ISS (mA) 0.80 0.60 0.40 0.20 0.00 8.8 9.2 9.6 10.0 10.4 10.8 11.2 11.6 12.0 VDD (V) +25C -45C +85C MCP73842-8.4V IOUT = 1000 mA FIGURE 2-8: Battery Regulation Voltage (VBAT) vs. Supply Voltage (VDD). 8.408 8.406 8.404 8.402 VBAT (V) 8.400 8.398 8.396 8.394 8.392 8.390 8.8 9.2 9.6 10.0 10.4 10.8 11.2 11.6 12.0 VDD (V) -5C +25C MCP73842-8.4V IOUT = 10 mA FIGURE 2-11: Supply Current (ISS) vs. Supply Voltage (VDD). 1.40 MCP73842-8.4V IOUT = 10 mA +55C ISS (mA) 1.20 1.00 0.80 0.60 0.40 0.20 0.00 8.8 9.2 9.6 -45C +25C +85C 10.0 10.4 10.8 11.2 11.6 12.0 VDD (V) FIGURE 2-9: Battery Regulation Voltage (VBAT) vs. Supply Voltage (VDD). FIGURE 2-12: Supply Current (ISS) vs. Supply Voltage (VDD). 2004 Microchip Technology Inc. DS21823B-page 7 MCP73841/2/3/4 Note: Unless otherwise indicated, VDD = [VREG(Typ) + 1V], IOUT = 10 mA and TA= +25C. 0.45 0.40 0.35 IDISCHARGE (A) 0.30 0.25 0.20 0.15 0.10 0.05 0.00 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 VBAT (V) +85C +25C -45C 0.90 0.80 0.70 IDISCHARGE (A) 0.60 0.50 0.40 0.30 0.20 0.10 0.00 4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2 7.6 8.0 8.4 VBAT (V) -45C +25C MCP73842-8.4V VDD = Float +85C MCP73841-4.2V VDD = Float FIGURE 2-13: Output Reverse Leakage Current (IDISCHARGE) vs. Battery Voltage (VBAT). 2.560 2.558 2.556 2.554 2.552 2.550 2.548 2.546 2.544 2.542 2.540 0 MCP73841-4.2V VDD = 5.2 V FIGURE 2-16: Output Reverse Leakage Current (IDISCHARGE) vs. Battery Voltage (VBAT). 2.560 2.558 2.556 2.554 2.552 2.550 2.548 2.546 2.544 2.542 2.540 0 MCP73842-8.4V VDD = 9.4 V +85C +25C VTHREF (V) +25C VTHREF (V) +85C -45C -45C 25 50 75 100 125 150 175 200 25 50 75 100 125 150 175 200 I THREF (A) I THREF (A) FIGURE 2-14: Thermistor Reference Voltage (VTHREF) vs. Thermistor Bias Current (ITHREF). 2.568 2.564 2.560 VTHREF (V) MCP73841-4.2V I THREF = 100 A FIGURE 2-17: Thermistor Reference Voltage (VTHREF) vs. Thermistor Bias Current (ITHREF). 2.568 2.564 2.560 VTHREF (V) +85C +25C -45C MCP73842-8.4V I THREF = 100 A 2.556 2.552 2.548 2.544 2.540 4.5 +85C +25C -45C 2.556 2.552 2.548 2.544 2.540 6.0 7.5 9.0 10.5 12.0 8.8 9.2 9.6 10.0 10.4 10.8 11.2 11.6 12.0 VDD (V) VDD (V) FIGURE 2-15: Thermistor Reference Voltage (VTHREF) vs. Supply Voltage (VDD). FIGURE 2-18: Thermistor Reference Voltage (VTHREF) vs. Supply Voltage (VDD). DS21823B-page 8 2004 Microchip Technology Inc. MCP73841/2/3/4 Note: Unless otherwise indicated, VDD = [VREG(Typ) + 1V], IOUT = 10 mA and TA= +25C. VDD VDD VBAT VBAT MCP73841-4.2V VDD Stepped From 5.2V to 6.2V IOUT = 10 mA COUT = 10 F, X7R, Ceramic MCP73841-4.2V VDD Stepped From 5.2V to 6.2V IOUT = 500 mA COUT = 10 F, X7R, Ceramic FIGURE 2-19: Line Transient Response. FIGURE 2-22: Line Transient Response. MCP73841-4.2V VDD = 5.2V COUT = 10 F, X7R, Ceramic VBAT MCP73841-4.2V VDD = 5.2V COUT = 10 F, X7R, Ceramic VBAT 100 mA IOUT 500 mA IOUT 10 mA 10 mA FIGURE 2-20: 0 -10 Attenuation (dB) -20 -30 -40 -50 -60 -70 -80 0.01 0.1 Load Transient Response. FIGURE 2-23: 0 -10 Attenuation (dB) -20 -30 -40 -50 -60 -70 -80 0.01 0.1 Load Transient Response. MCP73841-4.2V VDD = 5.2 V VAC = 100 mVp-p IOUT = 10 mA COUT = 10 F, X7R, CERAMIC MCP73841-4.2V VDD = 5.2 V VAC = 100 mVp-p IOUT = 100 mA COUT = 10 F, X7R, CERAMIC 1 10 100 1000 1 10 100 1000 Frequency (kHz) Frequency (kHz) FIGURE 2-21: Rejection. Power Supply Ripple FIGURE 2-24: Rejection. Power Supply Ripple 2004 Microchip Technology Inc. DS21823B-page 9 MCP73841/2/3/4 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: MCP73841, MCP73842 Pin No. 1 2 3 4 5 6 7 8 9 10 PIN DESCRIPTION TABLE MCP73843, MCP73844 Pin No. 1 2 3 4 -- -- 5 6 7 8 Name SENSE VDD STAT1 EN THREF THERM TIMER VSS VBAT DRV Function Charge Current Sense Input Battery Management Input Supply Charge Status Output Logic Enable Cell Temperature Sensor Bias Cell Temperature Sensor Input Timer Set Battery Management 0V Reference Battery Voltage Sense Drive Output 3.1 Charge Current Sense Input (SENSE) 3.6 Cell Temperature Sensor Input (THERM) Charge current is sensed via the voltage developed across an external precision sense resistor. The sense resistor must be placed between the supply voltage (VDD) and the external pass transistor (Q1). A 220 m sense resistor produces a fast charge current of 500 mA, typically. Input for an external thermistor for continuous celltemperature monitoring and pre-qualification. Apply a voltage equal to 0.85V to disable temperature-sensing. 3.7 Timer Set (TIMER) All safety timers are scaled by CTIMER/0.1 F. 3.2 Battery Management Input Supply (VDD) 3.8 A supply voltage of [VREG(Typ) + 0.3V] to 12V is recommended. Bypass to VSS with a minimum of 4.7 F. Battery Management 0V Reference (VSS) Connect to negative terminal of battery. 3.9 3.3 Charge Status Output (STAT1) Battery Voltage Sense (VBAT) Current limited, open-drain drive for direct connection to a LED for charge status indication. Alternatively, a pull-up resistor can be applied for interfacing to a host microcontroller. Voltage sense input. Connect to positive terminal of battery. Bypass to VSS with a minimum of 4.7 F to ensure loop stability when the battery is disconnected. A precision internal resistor divider regulates the final voltage on this pin to VREG. 3.4 Logic Enable (EN) 3.10 Drive Output (DRV) Input to force charge termination, initiate charge, clear faults or disable automatic recharge. Direct output drive of an external P-channel MOSFET for current and voltage regulation. 3.5 Cell Temperature Sensor Bias (THREF) Voltage reference to bias external thermistor for continuous cell temperature monitoring and prequalification. DS21823B-page 10 2004 Microchip Technology Inc. MCP73841/2/3/4 4.0 DEVICE OVERVIEW 4.3 Constant-Voltage Regulation The MCP7384X family of devices are highly advanced, linear charge management controllers. Figure 4-1 depicts the operational flow algorithm from charge initiation to completion and automatic recharge. When the battery voltage reaches the regulation voltage (VREG), constant-voltage regulation begins. The MCP7384X monitors the battery voltage at the VBAT pin. This input is tied directly to the positive terminal of the battery. The MCP7384X is offered in four fixed-voltage versions for single or dual series cell battery packs with either coke or graphite anodes: 4.1V 4.2V 8.2V 8.4V (MCP73841-4.1, MCP73843-4.1) (MCP73841-4.2, MCP73843-4.2) (MCP73842-8.2, MCP73844-8.2) (MCP73842-8.4, MCP73844-8.4) 4.1 Charge Qualification and Preconditioning Upon insertion of a battery or application of an external supply, the MCP7384X family of devices automatically perform a series of safety checks to qualify the charge. The input source voltage must be above the undervoltage lockout threshold, the enable pin must be above the logic-high level and the cell temperature monitor must be within the upper and lower thresholds. The cell temperature monitor applies to both the MCP73841 and MCP73842, with the qualification parameters being continuously monitored. Deviation beyond the limits automatically suspends or terminates the charge cycle. Once the qualification parameters have been met, the MCP7384X initiates a charge cycle. The charge status output is pulled low throughout the charge cycle (see Table 5-1 for charge status outputs). If the battery voltage is below the preconditioning threshold (VPTH), the MCP7384X preconditions the battery with a tricklecharge. The preconditioning current is set to approximately 10% of the fast charge regulation current. The preconditioning trickle-charge safely replenishes deeply depleted cells and minimizes heat dissipation in the external pass transistor during the initial charge cycle. If the battery voltage has not exceeded the preconditioning threshold before the preconditioning timer has expired, a fault is indicated and the charge cycle is terminated. 4.4 Charge Cycle Completion and Automatic Re-Charge The MCP7384X monitors the charging current during the constant-voltage regulation phase. The charge cycle is considered complete when the charge current has diminished below approximately 7% of the regulation current (IREG) or the elapsed timer has expired. The MCP7384X automatically begins a new charge cycle when the battery voltage falls below the recharge threshold (VRTH), assuming all the qualification parameters are met. 4.2 Constant-Current Regulation - Fast Charge Preconditioning ends and fast charging begins, when the battery voltage exceeds the preconditioning threshold. Fast charge regulates to a constant-current, IREG, based on the supply voltage minus the voltage at the SENSE input (VFCS) developed by the drop across an external sense resistor (RSENSE). Fast charge continues until the battery voltage reaches the regulation voltage (VREG); or until the fast charge timer expires. In this case, a fault is indicated and the charge cycle is terminated. 2004 Microchip Technology Inc. DS21823B-page 11 2004 Microchip Technology Inc. DS21823B-page 12 Initialize Note: The qualification parameters are continuously monitored throughout the charge cycle. Note VDD > VUVLO EN High Yes Note Temperature OK Yes Preconditioning Phase Charge Current = IPREG Reset Safety Timer No VBAT > VPTH Yes No STAT1 = Off No STAT1 = Flashing Charge Current = 0 STAT1 = On VBAT > VPTH Yes Constant-Current Phase Charge Current = IREG Reset Safety Timer Constant-Voltage Phase Output Voltage = V REG VBAT = VREG No Safety Timer Expired No Yes Yes Fault Charge Current = 0 Reset Safety Timer Yes No Safety Timer Expired No Yes IOUT < ITERM Elapsed Timer Expired No Yes Charge Termination Charge Current = 0 Reset Safety Timer MCP73841/2/3/4 Yes Temperature OK VDD < VUVLO VBAT < VRTH or EN Low Yes No STAT1 = Off Yes VDD < VUVLO Temperature OK Temperature OK or EN Low No No No Yes STAT1 = Flashing STAT1 = Flashing STAT1 = Flashing Safety Timer Suspended Safety Timer Suspended Charge Current = 0 Charge Current = 0 No STAT1 = Flashing Safety Timer Suspended Charge Current = 0 FIGURE 4-1: Operational Flow Algorithm - MCP73841 and MCP73842. MCP73841/2/3/4 5.0 5.1 5.1.1 DETAILED DESCRIPTION Analog Circuitry CHARGE CURRENT SENSE INPUT (SENSE) For NTC thermistors: 2 x R COLD x R H OT R T1 = ---------------------------------------------R COLD - R H OT 2 x R COLD x R H OT R T2 = ---------------------------------------------R COLD - 3 x R H OT Fast charge current regulation is maintained by the voltage drop developed across an external sense resistor (R SENSE) applied to the SENSE input pin. The following formula calculates the value for RSENSE: R SENSE V FCS = -----------I REG For PTC thermistors: 2 x R COLD x R H OT R T1 = ---------------------------------------------R H OT - R CO LD 2 x R COLD x R H OT R T2 = ---------------------------------------------R H OT - 3 x R CO LD where: RCOLD and R HOT are the thermistor resistance values at the temperature window of interest. Applying a voltage equal to 0.85V to the THERM input disables temperature monitoring. where: IREG is the desired fast charge current in amps The preconditioning trickle-charge current and the charge termination current are scaled to approximately 10% and 7% of IREG , respectively. 5.1.2 BATTERY MANAGEMENT INPUT SUPPLY (VDD) The VDD input is the input supply to the MCP7384X. The MCP7384X automatically enters a power-down mode if the voltage on the VDD input falls below the undervoltage lockout voltage (VSTOP). This feature prevents draining the battery pack when the VDD supply is not present. 5.1.5 TIMER SET INPUT (TIMER) The TIMER input programs the period of the safety timers by placing a timing capacitor (CTIMER) between the TIMER input pin and VSS. Three safety timers are programmed via the timing capacitor. The preconditioning safety timer period: C TIMER t PRE CON = ------------------ x 1.0Hour s 0.1F The fast charge safety timer period: C TIMER t FAST = ------------------ x 1.5Hours 0.1F The elapsed time termination period: C TIMER t TERM = ------------------ x 3.0Hours 0.1F The preconditioning timer starts after qualification and resets when the charge cycle transitions to the constant-current, fast charge phase. The fast charge and elapsed timers start once the MCP7384X transitions from preconditioning. The fast charge timer resets when the charge cycle transitions to the constant-voltage phase. The elapsed timer will expire and terminate the charge if the sensed current does not diminish below the termination threshold. 5.1.3 CELL TEMPERATURE SENSOR BIAS (THREF) A 2.55V voltage reference is provided to bias an external thermistor for continuous cell temperature monitoring and pre-qualification. A ratio metric window comparison is performed at threshold levels of V THREF/2 and VTHREF/4. Cell temperature monitoring is provided by both the MCP73841 and MCP73842. 5.1.4 CELL TEMPERATURE SENSOR INPUT (THERM) The MCP73841 and MCP73842 continuously monitor temperature by comparing the voltage between the THERM input and VSS with the upper and lower temperature thresholds. A negative or positive temperature coefficient (NTC or PTC) thermistor and an external voltage divider typically develop this voltage. The temperature-sensing circuit has its own reference, to which it performs a ratio metric comparison. Therefore, it is immune to fluctuations in the supply input (VDD). The temperature-sensing circuit is removed from the system when VDD is not applied, eliminating additional discharge of the battery pack. Figure 6-1 depicts a typical application circuit with connection of the THERM input. The resistor values of RT1 and RT2 are calculated with the following equations. 2004 Microchip Technology Inc. DS21823B-page 13 MCP73841/2/3/4 5.1.6 BATTERY VOLTAGE SENSE (VBAT) 5.2 5.2.1 Digital Circuitry CHARGE STATUS OUTPUT (STAT1) The MCP7384X monitors the battery voltage at the VBAT pin. This input is tied directly to the positive terminal of the battery. The MCP7384X is offered in four fixed-voltage versions for single or dual series cell battery packs, with either coke or graphite anodes: 4.1V 4.2V 8.2V 8.4V (MCP73841-4.1, MCP73843-4.1) (MCP73841-4.2, MCP73843-4.2) (MCP73842-8.2, MCP73844-8.2) (MCP73842-8.4, MCP73844-8.4) A status output provides information on the state-ofcharge. The current-limited, open-drain output can be used to illuminate an external LED. Optionally, a pull-up resistor can be used on the output for communication with a host microcontroller. Table 5-1 summarizes the state of the status output during a charge cycle. TABLE 5-1: Qualification Preconditioning STATUS OUTPUTS Stat1 OFF ON ON ON OFF Flashing (1 Hz, 50% duty cycle) Flashing (1 Hz, 50% duty cycle) OFF OFF 5.1.7 DRIVE OUTPUT (DRV) Charge Cycle State The MCP7384X controls the gate drive to an external P-channel MOSFET. The P-channel MOSFET is controlled in the linear region regulating current and voltage supplied to the cell. The drive output is automatically turned off when the voltage on the VDD input falls below the undervoltage lockout voltage (VSTOP). Constant-Current Fast Charge Constant-Voltage Charge Complete Safety Timer Fault Cell Temperature Invalid Disabled - Sleep mode Battery Disconnected The flashing rate (1 Hz) is based off a timer capacitor (CTIMER) of 0.1 F. The rate will vary based on the value of the timer capacitor. 5.2.2 LOGIC ENABLE (EN) The logic-enable input pin (EN) can be used to terminate a charge anytime during the charge cycle, initiate a charge cycle or initiate a recharge cycle. Applying a logic-high input signal to the EN pin, or tying it to the input source, enables the device. Applying a logic-low input signal disables the device and terminates a charge cycle. When disabled, the device's supply current is reduced to 0.25 A, typically. DS21823B-page 14 2004 Microchip Technology Inc. MCP73841/2/3/4 6.0 APPLICATIONS The MCP7384X is designed to operate in conjunction with either a host microcontroller or in stand-alone applications. The MCP7384X provides the preferred charge algorithm for Lithium-Ion and Lithium-Polymer Voltage Regulated Wall Cube cells: constant-current followed by constant-voltage. Figure 6-1 depicts a typical stand-alone application circuit, while Figure 6-2 depicts the accompanying charge profile. Optional Reverse Blocking Diode RSENSE Q1 + - SENSE VDD STAT1 RT1 1 2 3 10 DRV VBAT 9 MCP73841 8 7 VSS TIMER CTIMER EN 4 THREF 5 6 THERM RT2 Battery Pack FIGURE 6-1: Typical Application Circuit. Preconditioning Phase Regulation Voltage (VREG) Regulation Current (IREG) Constant-Current Phase Constant-Voltage Phase Charge Voltage Transition Threshold (V PTH) Charge Current Precondition Current (IPREG) Termination Current (ITERM) Precondition Safety Timer Fast Charge Safety Timer Elapsed Time Termination Timer FIGURE 6-2: Typical Charge Profile. 2004 Microchip Technology Inc. DS21823B-page 15 MCP73841/2/3/4 6.1 Application Circuit Design 6.1.1.2 External Pass Transistor Due to the low efficiency of linear charging, the most important factors are thermal design and cost, which are a direct function of the input voltage, output current and thermal impedance between the external P-channel pass transistor and the ambient cooling air. The worstcase situation occurs when the device has transitioned from the preconditioning phase to the constant-current phase. In this situation, the P-channel pass transistor has to dissipate the maximum power. A trade-off must be made between the charge current, cost and thermal requirements of the charger. The external P-channel MOSFET is determined by the gate-to-source threshold voltage, input voltage, output voltage and fast charge current. Therefore, the selected P-channel MOSFET must satisfy the thermal and electrical design requirements. Thermal Considerations The worst-case power dissipation in the external pass transistor occurs when the input voltage is at the maximum and the device has transitioned from the preconditioning phase to the constant-current phase. In this case, the power dissipation is: Pow erDi ssipation = ( V DDM AX - V PTHMIN ) x IREGMAX 6.1.1 COMPONENT SELECTION Selection of the external components in Figure 6-1 are crucial to the integrity and reliability of the charging system. The following discussion is intended to be a guide for the component selection process. 6.1.1.1 Sense Resistor Where: VDDMAX is the maximum input voltage. IREGMAX is the maximum fast charge current. VPTHMIN is the minimum transition threshold voltage. Power dissipation with a 5V, 10% input voltage source, 220 m, 1% sense resistor is: Po we rDissipation = ( 5.5V - 2.75V ) x 551 mA = 1.52W The preferred fast charge current for Lithium-Ion cells is at the 1C rate, with an absolute maximum current at the 2C rate. For example, a 500 mAh battery pack has a preferred fast charge current of 500 mA. Charging at this rate provides the shortest charge cycle times without degradation to the battery pack performance or life. The current sense resistor (RSENSE) is calculated by: V FCS R SENSE = -----------I REG Where: IREG is the desired fast charge current. For the 500 mAh battery pack example, a standard value 220 m, 1% resistor provides a typical fast charge current of 500 mA and a maximum fast charge current of 551 mA. Worst-case power dissipation in the sense resistor is: PowerDissipation = 220m x 551mA = 66.8mW A Panasonic(R) ERJ-6RQFR22V, 220 mW, 1%, 1/8W resistor in a standard 0805 package is more than sufficient for this application. A larger value sense resistor will decrease the fast charge current and power dissipation in both the sense resistor and external pass transistor, but will increase charge cycle times. Design trade-offs must be considered to minimize space while maintaining the desired performance. 2 Utilizing a FairchildTM NDS8434 or an International Rectifier IRF7404 mounted on a 1in2 pad of 2 oz. copper, the junction temperature rise is 75C, approximately. This would allow for a maximum operating ambient temperature of 75C. By increasing the size of the copper pad, a higher ambient temperature can be realized, or a lower value sense resistor could be utilized. Alternatively, different package options can be utilized for more or less power dissipation. Again, design tradeoffs should be considered to minimize size while maintaining the desired performance. Electrical Considerations The gate-to-source threshold voltage and R DSON of the external P-channel MOSFET must be considered in the design phase. The worst-case VGS provided by the controller occurs when the input voltage is at the minimum and the fast charge current regulation threshold is at the maximum. The worst-case VGS is: V GS = V DR VMAX - ( V DDMIN - V FCSMAX ) Where: VDRVMAX is the maximum sink voltage at the V DRV output VDDMIN is the minimum input voltage source VFCSMAX is the maximum fast charge current regulation threshold DS21823B-page 16 2004 Microchip Technology Inc. MCP73841/2/3/4 Worst-case VGS with a 5V, 10% input voltage source and a maximum sink voltage of 1.0V is: V GS = 1.0V - ( 4.5V - 120mV ) = - 3.38V At this worst-case (VGS) the RDSON of the MOSFET must be low enough as to not impede the performance of the charging system. The maximum allowable RDSON at the worst-case VGS is: V DDMIN - V FCSMAX - V BATMAX R D SON = ------------------------------------------------------------------------------I REGMAX 4.5V - 120 ( 115 )mV - 4.221V R D SO N = ------------------------------------------------------------------------ = 288m 551 ( 581 )mA The Fairchild NDS8434 and International Rectifier IRF7404 both satisfy these requirements. 6.1.1.3 EXTERNAL CAPACITORS 6.1.1.5 ENABLE INTERFACE In the stand-alone configuration, the enable pin is generally tied to the input voltage. The MCP7384X automatically enters a Low-power mode when voltage on the VDD input falls below the undervoltage lockout voltage (VSTOP), reducing the battery drain current to 0.4 A, typically. 6.1.1.6 CHARGE STATUS INTERFACE A status output provides information on the state of charge. The current-limited, open-drain output can be used to illuminate an external LED. Refer to Table 5-1 for a summary of the state of the status output during a charge cycle. 6.2 PCB Layout Issues The MCP7384X are stable with or without a battery load. In order to maintain good AC stability in the Constant-Voltage mode, a minimum capacitance of 4.7 F is recommended to bypass the VBAT pin to VSS. This capacitance provides compensation when there is no battery load. Additionally, the battery and interconnections appear inductive at high frequencies. These elements are in the control feedback loop during Constant-Voltage mode. Therefore, the bypass capacitance may be necessary to compensate for the inductive nature of the battery pack. Virtually any good quality output filter capacitor can be used, independent of the capacitor's minimum ESR (Effective Series Resistance) value. The actual value of the capacitor and its associated ESR depends on the forward transconductance (gm) and capacitance of the external pass transistor. A 4.7 F tantalum or aluminum electrolytic capacitor at the output is usually sufficient to ensure stability for up to a 1A output current. 6.1.1.4 REVERSE-BLOCKING PROTECTION For optimum voltage regulation, place the battery pack as close as possible to the device's VBAT and VSS pins. This is recommended to minimize voltage drops along the high current-carrying PCB traces. If the PCB layout is used as a heatsink, adding many vias around the external pass transistor can help conduct more heat to the back plane of the PCB, thus reducing the maximum junction temperature. The optional reverse-blocking protection diode, depicted in Figure 6-1, provides protection from a faulted or shorted input, or from a reversed-polarity input source. Without the protection diode, a faulted or shorted input would discharge the battery pack through the body diode of the external pass transistor. If a reverse-protection diode is incorporated into the design, it should be chosen to handle the fast charge current continuously at the maximum ambient temperature. In addition, the reverse-leakage current of the diode should be kept as small as possible. 2004 Microchip Technology Inc. DS21823B-page 17 MCP73841/2/3/4 7.0 7.1 PACKAGING INFORMATION Package Marking Information 8-Lead MSOP (MCP73843, MCP73844) Example: XXXXX YWWNNN 738431 0319256 10-Lead MSOP (MCP73841, MCP73842) Example: XXXXX YYWWNNN 738411 0319256 Legend: XX...X YY WW NNN Customer specific information* Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. * Standard marking consists of Microchip part number, year code, week code, and traceability code. DS21823B-page 18 2004 Microchip Technology Inc. MCP73841/2/3/4 8-Lead Plastic Micro Small Outline Package (MS) (MSOP) E E1 p D 2 B n 1 A c A1 (F) A2 L 8 Number of Pins .026 BSC Pitch A .043 Overall Height A2 .030 .033 .037 Molded Package Thickness A1 .006 .000 Standoff E .193 TYP. Overall Width E1 .118 BSC Molded Package Width D .118 BSC Overall Length L .016 .024 .031 Foot Length Footprint (Reference) F .037 REF Foot Angle 0 8 c Lead Thickness .003 .006 .009 B .009 .012 .016 Lead Width 5 15 Mold Draft Angle Top 5 15 Mold Draft Angle Bottom *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. Units Dimension Limits n p MIN INCHES NOM MAX MIN MILLIMETERS* NOM 8 0.65 BSC 0.75 0.85 0.00 4.90 BSC 3.00 BSC 3.00 BSC 0.40 0.60 0.95 REF 0 0.08 0.22 5 5 - MAX 1.10 0.95 0.15 0.80 8 0.23 0.40 15 15 JEDEC Equivalent: MO-187 Drawing No. C04-111 2004 Microchip Technology Inc. DS21823B-page 19 MCP73841/2/3/4 10-Lead Plastic Micro Small Outline Package (UN) (MSOP) E E1 p D B n 2 1 c A2 A1 (F) L1 L A Number of Pins Pitch .043 Overall Height A Molded Package Thickness A2 .030 .037 Standoff A1 .000 .006 Overall Width E Molded Package Width E1 Overall Length D Foot Length L .016 .031 Footprint F 0 8 Foot Angle c .003 Lead Thickness .009 B .006 Lead Width .012 5 15 Mold Draft Angle Top 5 15 Mold Draft Angle Bottom *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC Equivalent: MO-187 Drawing No. C04-021 Units Dimension Limits n p MIN INCHES NOM 10 .020 TYP .033 .193 BSC .118 BSC .118 BSC .024 .037 REF .009 - MAX MIN MILLIMETERS* NOM 10 0.50 TYP. 0.85 0.75 0.00 4.90 BSC 3.00 BSC 3.00 BSC 0.60 0.40 0.95 REF 0 0.08 0.15 0.23 5 5 MAX 1.10 0.95 0.15 0.80 8 0.23 0.30 15 15 DS21823B-page 20 2004 Microchip Technology Inc. MCP73841/2/3/4 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device XXX Preset Voltage Options X Temperature Range XX Package Examples: a) b) c) d) Single-cell charge controller with temperature monitor Single-cell charge controller with temperature monitor, Tape and Reel Dual series cells charge controller with temperature monitor Dual series cells charge controller with temperature monitor, Tape and Reel Single-cell charge controller Single-cell charge controller, Tape and Reel Dual series cells charge controller Dual series cells charge controller, Tape and Reel MCP73841-410I/UN: 4.1V Preset Voltage MCP73841T-410I/UN: 4.1V Preset Voltage, Tape and Reel MCP73841-420I/UN: 4.2V Preset Voltage MCP73841T-420I/UN: 4.2V Preset Voltage, Tape and Reel MCP73842-820I/UN: 8.2V Preset Voltage MCP73842T-820I/UN: 8.2V Preset Voltage, Tape and Reel MCP73842-840I/UN: 8.4V Preset Voltage MCP73842T-840I/UN: 8.4V Preset Voltage, Tape and Reel MCP73843-410I/MS: 4.1V Preset Voltage MCP73843T-410I/MS: 4.1V Preset Voltage, Tape and Reel MCP73843-420I/MS: 4.2V Preset Voltage MCP73843T-420I/MS: 4.2V Preset Voltage, Tape and Reel MCP73844-820I/MS: 8.2V Preset Voltage MCP73844T-820I/MS: 8.2V Preset Voltage, Tape and Reel MCP73844-840I/MS: 8.4V Preset Voltage MCP73844T-840I/MS: 8.4V Preset Voltage, Tape and Reel Device MCP73841: MCP73841T: MCP73842: MCP73842T: MCP73843: MCP73843T: MCP73844: MCP73844T: a) b) c) d) a) b) c) d) Preset Voltage Regulation Options 410 420 820 840 I MS UN = = = = 4.1V 4.2V 8.2V 8.4V a) b) c) d) Temperature Range Package = -40C to +85C (Industrial) = Plastic Micro Small Outline (MSOP), 8-lead = Plastic Micro Small Outline (MSOP), 10-lead Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products. 2004 Microchip Technology Inc. DS21823B-page 21 MCP73841/2/3/4 NOTES: DS21823B-page 22 2004 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * * * Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." * * Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip's products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart and rfPIC are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL, SmartShunt and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, Select Mode, SmartSensor, SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2004, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company's quality system processes and procedures are for its PICmicro(R) 8-bit MCUs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 2004 Microchip Technology Inc. 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De Biesbosch 14 NL-5152 SC Drunen, Netherlands Tel: 31-416-690399 Fax: 31-416-690340 ASIA/PACIFIC Australia Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 United Kingdom 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44-118-921-5869 Fax: 44-118-921-5820 02/17/04 DS21823B-page 24 2004 Microchip Technology Inc. |
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